JXP8402KRG_E靖芯科技 恒佳盛电子一级代理商.pdf

DESCRIPTION SCHEMATIC DIAGRAM The JXP8402KRG uses advanced trench D S technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as G G a load switch or in PWM applications. GENERAL FEATURES  N-Channel S D VDS =65V ，ID =0.13A PIN ASSIGNMENT RDS(ON)(Typ.)=1.7Ω @VGS=10V RDS(ON)(Typ.)=2.1Ω @VGS=4.5V SOT-363 P-Channel (Top view) VDS =-55V ，ID =-0.13A 6 5 4 RDS(ON)(Typ.)=1Ω @VGS=-10V RDS(ON)(Typ.)=1.2Ω @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package  N MOSFET ESD Rating: 2000V HBM APPLICATION  PWM applications  Load switch PACKAGE 1 2 3  SOT-363 ORDERING INFORMATION Part Number Storage Temperature Package Marking Devices Per Reel JXP8402KRG -55°C to +150°C SOT-363 402 3000 ABSOLUTE MAXIMUM RATINGS (T =25℃ unless otherwise noted) A Limit Parameter Symbol Unit N P Drain-source voltage VDS 65 -55 V Gate-source voltage VGS