JXP6815MRG_E靖芯科技 恒佳盛电子一级代理商.pdf

DESCRIPTION SCHEMATIC DIAGRAM The JXP6815MRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  VDS =-20V，ID =-4A RDS(ON)(Typ.)=50mΩ @VGS=-2.5V PIN ASSIGNMENT RDS(ON)(Typ.)=35mΩ @VGS=-4.5V  High power and current handing capability SOT23-6L  Lead free product is acquired (TOP VIEW)  Surface mount package D1 S1 D2 6 5 4 APPLICATION  PWM applications 6 8 1 5  Load switch PACKAGE 1 2 3 G1 S2 G2  SOT23-6L ORDERING INFORMATION Part Number Storage Temperature Package Marking Devices Per Reel JXP6815MRG -55°C to +150°C SOT23-6L 6815 3000 ABSOLUTE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS -20 V Gate-source voltage VGS ±12 V T =25°C -4 A Continuous drain current (T = 150 °C) a I