JXP1216DRG_E靖芯科技 恒佳盛电子一级代理商.pdf

DESCRIPTION SCHEMATIC DIAGRAM The JXP1216DRG uses advanced trench S technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable G for use as a load switch or in PWM applications. GENERAL FEATURES D  VDS =-12V ，ID =-16A RDS(ON)(Typ.)=16.5mΩ @VGS=-2.5V PIN ASSIGNMENT RDS(ON)(Typ.)=12mΩ @VGS=-4.5V  High power and current handing capability DFN2020-6L  Lead free product is acquired Top View Bottom View  Surface mount package APPLICATION  PWM applications  Load switch PACKAGE  DFN2020-6L Note：XXYY—Date code ORDERING INFORMATION Part Number Storage Temperature Package Marking Devices Per Reel JX1216 JXP1216DRG -55°C to +150°C DFN2020-6L 3000 XXYY ABSOLUTE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS -12 V Gate-source voltage VGS ±12 V T =25℃ -16a C T =70℃