JXP30P10G_E靖芯科技 恒佳盛电子一级代理商.pdf

STBCHIP 100V P-Channel Enhancement Mode MOSFET DESCRIPTION SCHEMATIC DIAGRAM JXP30P10G uses advanced power trench S technology that has been especially tailored to minimize the on-state resistance andyet maintain superior switching performance. G GENERAL FEATURES  ID =-30A,VDS=-100V D  RDS(ON)(Typ.)=35mΩ@VGS=-10V  RDS(ON)(Typ.)=45mΩ@VGS=-4.5V PIN ASSIGNMENT  Green Device Available  Low Gate Charge  Advanced High Cell Density Trench Technology  100% EAS Guaranteed APPLICATION  Power Management Switches  DC/DC Converters PACKAGE  TO-252 Note：XXYY—Date Code ORDERING INFORMATION Part Number Storage Temperature Package Marking Devices Per Reel JXP30P10G -55°C to +150°C TO-252 JXP30P10/XXYY 2500 ABSOLUTE MAXIMUM RATINGS (T =25℃ unless otherwise noted) A Parameter Symbol Limit Unit Drain-source voltage VDS -100 V Gate-source voltage VGS ±20 V T =25°C -30 A Continuous drain current (T = 150 °C) a I J D T =70°C -25