半导体制造技术导论（第二版）萧宏 第11章 金属化工艺.pptxVIP

2023-07-31;集成电路工艺流程;11.1 金属化工艺介绍;Interconnection;Copper Metallization;11.1 金属化工艺介绍;Applications Interconnection (互连) Al, Al-Cu alloy(合金) W plug, Ti/ TiN Cu, Ta Gate and electrodes (栅和电极) Al gate, Polysilicon gate, TiN gate Silicide (WSi2, TiSi2, CoSi2, NiSi2);2023-07-31;11.2 导电薄膜及其特性;导电薄膜—多晶硅;导电薄膜—硅化物;导电薄膜—硅化物;导电薄膜—铝;导电薄膜—铝;导电薄膜—铝;导电薄膜—钛;导电薄膜—钛;导电薄膜—钛;导电薄膜—氮化钛;导电薄膜—钨;导电薄膜—钨;导电薄膜—钨;导电薄膜—铜;导电薄膜—钽;导电薄膜的特性(自学);2023-07-31;27;28;金属CVD和PVD工艺简介—CVD;金属CVD和PVD工艺简介—CVD;金属CVD和PVD工艺简介—PVD;金属CVD和PVD工艺简介—PVD;金属CVD和PVD工艺简介—PVD;金属CVD和PVD工艺简介—PVD;金属CVD和PVD工艺简介—PVD;金属CVD和PVD工艺简介—PVD;金属CVD和PVD工艺简介—PVD;金属CVD和PVD工艺简介—PVD;金属CVD和PVD工艺简介—PVD;金属CVD和PVD工艺简介—PVD;金属CVD和PVD工艺简介;金属化工艺流程;金属化工艺流程—接触孔/通孔;金属化工艺流程—接触孔/通孔;Pre-clean;Al-Cu Interconnection Process Degas (排气) Pre-clean (预清洗) Ti PVD, TiN PVD Al-Cu PVD TiN PVD;金属化流程— Cu互连线;Copper Interconnection Process Degas (排气) Pre-clean (预清洗) Ta PVD Cu seed PVD Cu ECP (铜化学电镀法);W, WSi2工艺— W CVD;W, WSi2工艺— W CVD;W, WSi2工艺— W CVD;W, WSi2工艺— WSix CVD;W, WSi2工艺— WSix CVD;W, WSi2工艺— WSix CVD;Ti/TiN工艺— Ti CVD;Ti/TiN工艺— Ti PVD;Ti/TiN工艺— Ti PVD;Ti/TiN工艺— Ti PVD;Ti/TiN工艺— TiN PVD;Ti/TiN工艺— TiN PVD;Ti/TiN工艺— TiN CVD;Ti/TiN工艺— TiN CVD;Ti/TiN工艺— TiN CVD;Ti/TiN工艺— TiN CVD;Al, Al-Cu, Cu工艺— Al CVD;Al, Al-Cu, Cu工艺— Al-Cu PVD;Al, Al-Cu, Cu工艺— Cu金属化;Al, Al-Cu, Cu工艺— Cu金属化;Al, Al-Cu, Cu工艺— Cu金属化;Al, Al-Cu, Cu工艺— Cu金属化;Al, Al-Cu, Cu工艺— Cu金属化;Al, Al-Cu, Cu工艺— Cu金属化;Al, Al-Cu, Cu工艺— Cu金属化;Al, Al-Cu, Cu工艺— Cu金属化;Al, Al-Cu, Cu工艺— Cu金属化;Al, Al-Cu, Cu工艺— Cu金属化;Al, Al-Cu, Cu工艺— Cu金属化;Al, Al-Cu, Cu工艺— Cu金属化;Al, Al-Cu, Cu工艺— Cu金??化;11.4 本章小结;课后作业题