MITSUBISHI ELECTRIC SEMICONDUCTORS POWER MODULES MOS GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 说明书用户手册.pdf

3.0 General Considerations for 3.1 Numbering System IGBT and Intelligent Power Modules (1) Devices: Outline or Minor Change H-Series IGBT and Intelligent CM =IGBT Module U = U-Series Power Modules are based on PM = IPM advanced third ForIGBT Module: generation IGBT and free-wheel (2) Current Rating lc (Amperes) Voltage, VcEs Volts {x50) diode technologies,. The general (3) For IPM: ForIPM: guidelines for power circuit， H = Single Voltage VcEs Volts (x10) snubber and thermal system D=Dual design are essentially the same for C=Sixinone ForIGBT Module: both product families. This section R = Seven in one F = 250V Trench Gate will cover these general application H = Total Performance H-Series (4) IGBT Module: IGBT Module issues, The sections that follow will H = Single give specific details for each D= Dual For1IPM product family. 工 = Six S=Third Generation E9 = Brake V = V-Series Examples: CM | 90 CM100DY-24H is a 100 Ampere， 1200 Volt, Dual IGBT Module FM 590 PM600HSA120 is a 600 Ampere， 1200 Volt Single IPM