sic mosfet-栅极驱动器共封装meeting slides.pptx

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sic mosfet-栅极驱动器共封装meeting slides.pptx

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SiCMOSFET-GateDriverCo-Package

LiqiZhang,YangLei

July10,2014Liqi:PronounceasLychee

OutlineProcessAdvantageFutureworkConclusion2

Process-StepsStep1.PreparethematerialsStep2.StickthepaperonbothsidesofDBCStep3.HeatDBCStep4.UVonbothsidesofDBCStep5.DevelopbothsidesofDBCStep6.EtchingStep7.Autostrip3

Process-PreparethematerialsThreelayers:PlasticBluepaintPlasticDBCAttachbluepaintontobothsidesofDBC4

Process-HeatDBCSettings:Temperature:50Celsius,Timeduration:10~15minsHeatingOven5

Process-UVonDBCUVovenSettings:Lightstrength(35%-100%):50%Time:4secondsCovertheblackframeononesideofDBC(minimumwidthoflayout:0.5mm)6

Process-DevelopDBCDevelopDBCafterexposedtoUVDeveloperisusedinthisstep.BluepaintremainsinareasexposedtoUV.7

Process-EtchingBubbleSystemSettings:Temperature:50~60DegreesCelsiusHeatingstickThermometerClipExhaustAirSystem8

Process-AutostripAfterautostripMinimumwidthof0.5mmAutostripPowderisusedinthissteptoremoveallthebluepaintonDBC.9

Process–NickelplatingAfternickelplatingChemicalplatingisadoptedusingnickelsulfateandboricasthesolvent.10

AdvantageEasytomanufactureFasttoproducethanindustryFlexibletolayoutchanges11

FutureWorkSolderingcomponentsonthelayoutBuildwirebondAssemblethepowermoduleTestpowermodule12

ConclusionDBCpackagingprocessisreportedindetailedsteps,includingUV,developing,etching,autostripandnickelplating.Althoughsomeprocessstepsneedtobeimproved,theoverallprocessmanifestsitsgreatadvantages.Soldering,buildingwirebond,assemblingandtestingthemodulearenextsteps.13

Thankyou14