共封装功率模块概述proposalti提案.pptx

Co-packagedpowermodule

OverviewSiCMOSFETbackgroundanditsgatedriverGatedriverchallengesPriorworkongatedriverICProblemStatementProposedprojecttasksandtimeline

Background:applicationApplication:PVinverter,MotorDrive,WindTurbine,UPSetc.SolarPanelsWindTurbineUPSMotorDrivePowerSupply

Background:SiCMOSFETCharacteristicsSwitchinglosscomparisonTurn-onlossTurn-offloss

Lossperdevicefordifferentswitchingfrequency600Vdcto380Vacsinglephase,20kWInfineonSiIGBTCreeSiCMOSFETBackground:SiCMOSFETCharacteristics

SiCMOSFEThasasignificantadvantageinhighpowerconverterapplicationduetoitshighefficiencyandhighoperatingtemperature.ThesefeaturesalsoallowSiCMOSFETtooperateathigherfrequencytoachieveabetterperformance.SincethetransconductanceofSiCMOSFETislower,gatedriversolutionforSiCMOSFETisgreatlydifferentfromthatisforSiIGBT.GatedriverforSiCMOSFETwillhaveanextansivemarketdemand.6Background:SiCMOSFETCharacteristics

SiCMOSFEThasalowtransconductancethanSiIGBT.Background:SiCMOSFETCharacteristics

SiCMOSFETGateDriverRequirement:SiCMOSFETGateDriverAlargepeakgatecurrent,resultinginafastgatevoltagetransitionandlowswitchingloss.Preventionofvoltageovershootandringingfollowingaswitchingtransition.Alow-impedancecurrentpathbetweenthegateandsourceinoff-state,topreventchannelconductionifdrainvoltagerisessuddenlyduetocurrentinjectionthroughtheMillercapacitance.Theabilitytotolerateparasiticinductanceinthegatedriverpath.

600V100Aturnon:Eon=2.953mJVGSVDCVDSdvdt:12.17kV/usdidt:4271A/us(Rg:5Ω,Vgs:+20V/-5V)IdsGatedriverchallengesSiCMOSFETturn-onwaveform:

GatedriverchallengesVGSVDCVDSdvdt:16.04kV/usdidt:3750A/us(Rg:5Ω,Vgs:+20V/-5V)Ids600V100Aturnon:Eoff=1.266mJSiCMOSFETturn-offwaveform:

dv/dtimpactonthegatedriverVmosfet_gateVacIacdv/dtinducedgatevoltageGatevoltagespikecaused