TFTLCD黄光制程介绍资料.pptVIP

IVOCONFIDENTIALPhotoIntroductionINTArray2024/9/7

PhotoResistThinFilmGlassArrayProcessExposureLightPhotoMaskStripThinFilmGlassPRcoatingPhotoResistDevelopEtch2024/9/7

PhotoProcessPhotoprocess:Coating---Exposure---DevelopmentCoating：将光阻均匀地涂布于基板表面Exposure：由紫外线透射光罩将图形转写至光阻表面Development：利用碱性显影液將紫外线照射的光阻去除以形成图形2024/9/7

ThestructureofDNSSK-1100GLinear-coating(Vacuumdry)InEUVRBAAjetAKDryOutPost-bakeDHBInOutPre-BakeTitlerorE.E.Exp.BF90°turnInOutOutAOILorConveyorAKDryRinse(Sub.Direct)Dev.1,230,7305,9105,5102024/9/7

Cleanerintroduction2024/9/7

CleanerintroductionThesimpledrawingofcleaner2024/9/7

PhotoProcess-Cleaner目的:减小接触角和减少灰尘控制参数:E-UVcleanabilityRinseflowrateMistcontrolanddryperformanceThinfilmconditionCleanerintroduction2024/9/7

ThestructureofE-UVchamberCleanerintroduction2024/9/7

ThemeasurementofcontactangleCleanerintroduction2024/9/7

ThesimpledrawingofrollerbrushAAjetrinsesectionCleanerintroduction2024/9/7

AAJETCleanerintroduction2024/9/7

ThebasicprincipleofinclinedrinseCleanerintroduction2024/9/7

BrushstructureCleanerintroduction2024/9/7

AirknifeWaterstripperVerticaltilt60°Horizontaltilt60°Cleanerintroduction2024/9/7

ThedryprocedureofAKCleanerintroduction2024/9/7

AirKnifeCleanerintroduction2024/9/7

Coaterintroduction2024/9/7

CoaterintroductionDehydrationbake2024/9/7

DehydrationbakeCoaterintroduction2024/9/7

Purpose:ToIncreasetheAdhesionofPhotoresistAdhesion:HMDS(Hexamethyldisilazane);[(CH3)3Si]2NHKeyparameter:AdhesionMethodAdhesionTimeTemperatureExhaustFunction:Si-O-H----OH2+[(CH3)3Si2NHSi-O-Si-(CH3)3PhotoProcess-AdhesionCoaterintroduction2024/9/7

PhotoProcess-AdhesionCoaterintroduction2024/9/7

Resist:树脂（20%）感光剂(PAC)（5%）溶剂（75%）添加剂PhotoProcess-CoatingCoaterintroduction2024/9/7

目的1.将MASK上的图案转移到胶中2.在后续工艺中保护下面的材料Coaterintroduction2024/9/7

ExposureLightPositiveTypeNegativeTypeDevelopingResistThinFilmSubstrateMaskChrome正光阻：曝光后，光照到部分显影后去除