文稿讲稿详解sic meeting slides.pptx

SiCMOSFETGateDriverCo-package

ProjectUpdate

YangLei

Mar6,2014

OutlineDirectbondcopper(DBC)substrateDBClayoutDesignFlipchip

DirectbondcoppersubstrateCommonmaterial:Alumina(Al2O3)Aluminumnitride(AlN)Berylliumoxide(BeO)Siliconnitride(Si3N4)Advantages:HighdielectricstrengthHighthermalconductivityCoefficientofthermalexpansion

DirectbondcoppersubstrateMaterialDielectricstrength(MV/m)Thermalconductivity(W/m.K)Coefficientofthermalexpansion(ppm/K)Al2O316.7246.8AlN171804.7BeO123309Si3N4-902.5Epoxy160.7245-65SiC--4Si--3.2PropertiesofcommonDBCmaterials

DirectbondcoppersubstrateBothceramicmaterialsandepoxyhaveverygooddielectricstrength.Ceramicmaterialshavemuchbetterthermalconductivityperformance.Ceramicmaterialshavesimilarcoefficientofthermalexpansion(CTE)withsemiconductormaterials.EpoxyhasaverylargeCTE.Thepowerdevicesusuallyhavealargechiparea.Epoxysubstratemaycausestrongstressonchipwhentemperaturechanges.

DBCLayoutDesignUCC27531DieSiCMOSFETDieCPM2-1200-0080B1200V/31.6ASiCDiodeDieCPW2-1200-S008B1200V/7.5ADrainSourceINENVDDGNDSourceGCeremic

DBCLayoutDesign17mm11.5mm1.5mmSizeofthelayout.

WirebondingdiagramGateDriverCircuitINENVDDGNDSourceG0.5mm

WirebondingdiagramMOSFETandDiode1.5mm3.5mmwire4mmwire

InsulationTheheightofthebondwireshouldbelargeenoughtoblock1200Vvoltage.Thisdarkareaneedtoblock1200Vvoltage.

ThermalresistanceIftheMOSFETlossis20W,thetemperatureriseis24.61K.Calculatedthermalresistancefromchiptobottomofthesubstrateis1.2305K/W.

PackagePutthemoduleintoaboxanduseepoxytoencapsulatethemoduleandterminals.

H-BridgeDBCDesignThehalf-bridgemodulecanbebuiltbyduplicatingthesingleMOSFETmodule.HighsidecircuitLowsidecircuit

FlipchipFlipchippackagingwillachieveaverylowstrayinductance.HeatsinkCeramicCopperMOSFETPatternedcopperFR4GateDriverPassiveElement

FlipchipAdvantages:Smallstrayi