APG072N06G-AU深圳恒锐丰科技.pdf

APG072N06G-AU

N-ChannelEnhancementMosfet

Features

⚫60V,50A

R（）7.2mΩ＠V=10VTYP:5.3mΩ

DSONGS

R（）10.5mΩ＠V=4.5VTYP:7.6mΩ

DSONGS

⚫LowRDS(ON)

⚫100%UISTested

⚫RoHScompliant(Note1)

⚫Halogen-free

⚫Tjmax=175℃

⚫AEC-Q101qualified

Applications

⚫BatteryManagementSystem

⚫MotorDrivers

⚫DC-DCConverter

PackageMarkingandOrderingInformation

DeviceMarkingDeviceDevicePackageReelSizeTapewidthQuantity(PCS)

G072N06G-AUAPG072N06G-AUPDFN5X6--5000

ABSOLUTEMAXIMUMRATINGS(T=25℃unlessotherwisenoted)

J

ParameterSymbolValueUnit

Drain-SourceVoltageVDS60V

Gate-SourceVoltageVGS±20V

ContinuousDrainCurrent(T=25℃,Siliconlimited)ID50A

C

ContinuousDrainCurrent(T=100℃)(2)ID36A

C

PulsedDrainCurrent(1,2)IDM200A

SinglePulsedAvalancheEnergy(3)EAS90mJ

DrainPowerDissipationPD75W

ThermalResistancefromJunctiontoCase(2)RθJC2℃/W

ThermalResistance-JunctiontoAmbient(2)