AGM605AP-Q VER2.5深圳恒锐丰科技.pdf

AGM605AP-Q

●GeneralDescription

Prdu

octSummary

TheAGM605AP-QcombinesadvancedtrenchMOSFET

technologywithalowresistancepackagetoprovide

extremelylowRDS(ON).BVDSSRDSONID

Thisdeviceisidealforloadswitchandbattery

protectionapplications.60V6.2mΩ58A

●Features

■AdvancehighcelldensityTrenchtechnologyPDFN3.3*3.3PinConfiguration

■LowRDS(ON)tominimizeconductiveloss

■LowGateChargeforfastswitching

■LowThermalresistance

■100%Avalanchetested

■100%DVDStested

●Application

■MB/VGAVcore

nd

■SMPS2SynchronousRectifier

■POLapplication

■BLDCMotordriver

eaoni

rdrnfmt

cgeMarkingandOingIor

Paka

DeceDeeDeiceaReiTapewdtiQuantity

viMarkingvicvPckageelSzeh

AGM605APAGM605AP-QPDFN3.3*3.3330mm12mm5000

Table1.AbsoluM

teaximumRai

tngs(TA25℃)

SymbolParameterValueUnit

VDSDrani-oureVoltag

Sce(VGS0V）60V

VGSGate-SourceVoltage(VDS0V)±20V