AGM2N7002K VER2.66深圳恒锐丰科技.pdf

AGM2N7002K

●GeneralDescription

ProductSmy

umar

TheAGM2N7002Kcombinesadvancedtrench

MOSFETtechnologywithalowresistancepackage

toprovideextremelylowRDS(ON).

ThisdeviceisidealswitchandbatteryRDONID

forloadBVDSSS

protectionapplications.

●Features60V2.0Ω0.3A

■AdvancehighcelldensityTrenchtechnology

SOT-23PinConfiguration

■LowRDS(ON)tominimizeconductiveloss

■LowGateChargeforfastswitching

■LowThermalresistance

■100%Avalanchetested

■100%DVDStested

■ESDProtectedupto2KV(HBM)

●Application

■ElectronicBallast

■ElectronicTransformer

■SwitchModePowerSupply

PackageMarkingandOrderingInformation

DeviceMarkingDeviceDevicePackageReelSizeTapewidthQuantity

72KAGM2N7002KSOT-23178mm8mm3000

Table1.AbsoluteMaximumRatings(TA=25)

℃

SymbolParameterValueUnit

VDSDrain-SourceVoltage(VGS0V）60V

VGSGate-SourceVoltage(VDS=0V)±20V

IDDrainCurrent-Continuous(Tc=25℃)(Note1)