案例讲稿超高速sic meeting slides.pptx

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案例讲稿超高速sic meeting slides.pptx

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UltraFastSiCMOSFETGateDriver

ProjectUpdate

YangLei

Jan8,2015

OutlineAbnormalTurn-offissueanalysis.ExperimentverificationdV/dtcomparisonresultsFuturework

AbnormalTurn-offissueanalysisTheMOSFETisturnedoffautomaticallyrightaftertheturnonprocess.ThehighdV/dtinducescurrentflowthroughparasiticcapacitors,whichcausesvoltagedroponinputpinandenablepinofthegatedriverIC.Severalexperimentshavebeenconducted.Theresultscoordinatewiththeproposedassumption.

PackagedModulewithUCC27531MOSFETMOSFET1kVcap0.047uF33mm20mmINENSWSWBottomCopperLayerAluminumOxide(εr=9.3-11.5)InputUCC27531≈2pF≈20pF15mil

AbnormalTurn-offissueanalysisSWBottomCopperLayerAluminumOxide(εr=9.3-11.5)Whenlowerswitchisoff:InputUCC27531+800V+1VWhenlowerswitchisoff:SWBottomCopperLayerInputUCC275310V0VAluminumOxide(εr=9.3-11.5)≈2pF≈2pF≈20pF≈20pF

AbnormalTurn-offissueanalysisDischargecurrentpathPull-upresistorParasiticinductanceParasiticCapacitancedV/dtinducedcurrentInputinternalcapacitanceisdischarged.IN

AbnormalTurn-offissueanalysisDrainsourcevoltageatVDC=500V.

AbnormalTurn-offissueanalysisdV/dtatVDC=500V.dV/dtreached10V/ns

AbnormalTurn-offissueanalysisEstimatedcurrentflow.Pull-upresistor330ΩdV/dtinducedcurrentInputinternalcapacitanceisdischarged.IN20mA15mA

ExperimentalVerificationConnectbottomcoppertoaconstantpotential(DC-).BottomcopperisfloatingBottomcopperisconnectedtoDC-LongerMillerPlateauinterval

ExperimentalVerificationCutthebottomcopperlayertoreducethecoupling.SWBottomCopperLayerAluminumOxide(εr=9.3-11.5)InputUCC27531+800V+1V≈2pF≈20pFBottomCopperLayerVerysmallcapThebottomcopperiscutintothreepieces:powerstage,highsidegatedriverandlowsidegatedriver.

ExperimentalVerificationComparisonSinglepieceofbottomcopperSeparatedpiecesofbottomcopper

ExperimentalVerificationThismethodmaynotbeasolutionbecausefinallytherewillb