NCE30P55L深圳恒锐丰科技.pdf

NCE30P55L

NCEP-ChannelEnhancementModePowerMOSFET

Description

TheNCE30P55Lusesadvancedtrenchtechnologyanddesign

toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis

wellsuitedforhighcurrentloadapplications.

GeneralFeatures

●V=-30V,I=-55A

DSD

Schematicdiagram

RDS(ON)8.5mΩ@VGS=-10V

RDS(ON)19mΩ@VGS=-4.5V

●HighdensitycelldesignforultralowRdson

●Fullycharacterizedavalanchevoltageandcurrent

●Excellentpackageforgoodheatdissipation

●Pbfreeterminalplating

●RoHScompliant

●Halogenfree

Markingandpinassignment

Application

●Highsideswitchforfullbridgeconverter

●DC/DCconverterforLCDdisplay

100%UISTESTED!

100%∆VdsTESTED!

TO-251S-3Ltopview

PackageMarkingandOrderingInformation

DeviceMarkingDeviceDevicePackageReelSizeTapewidthQuantity

NCE30P55LNCE30P55LTO-251S---

AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)

C

ParameterSymbolLimitUnit

Drain-SourceVoltageVDS-30V

Gate-SourceVoltageVGS±20V

DrainCurrent-Continuous