NCE20NP1006S深圳恒锐丰科技.pdf

NCE20NP1006S

NandP-ChannelEnhancementModePowerMOSFET

Description

TheNCE20NP1006Susesadvancedtrenchtechnologyto

provideexcellentRDS(ON)andlowgatecharge.The

complementaryMOSFETsmaybeusedtoformalevelshifted

highsideswitch,andforahostofotherapplications.

GeneralFeatures

●N-Channel

N-channelP-channel

V=20V,I=10A

DSD

RDS(ON)14mΩ@VGS=4.5VSchematicdiagram

RDS(ON)18mΩ@VGS=2.5V

●P-Channel

V=-20V,I=-6A

DSD

RDS(ON)45mΩ@VGS=-4.5V

RDS(ON)60mΩ@VGS=-2.5V

●Highpowerandcurrenthandingcapability

●Leadfreeproductisacquired

●Surfacemountpackage

●PbfreeterminalplatingMarkingandpinassignment

●RoHScompliant

●Halogenfree

Application

●PowerManagement

SOP-8topview

PackageMarkingandOrderingInformation

DeviceMarkingDeviceDevicePackageReelSizeTapewidthQuantity

20NP1006SNCE20NP1006SSOP-8Ø330mm12mm4000units

AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)

A

ParameterSymbolN-ChannelP-ChannelUnit

Drain-SourceVoltageVDS20-20V

Gate-SourceVoltageVGS±12±12V