NCE4606B深圳恒锐丰科技.pdf

NCE4606B

NandP-ChannelEnhancementModePowerMOSFET

Description

TheNCE4606Busesadvancedtrenchtechnologytoprovide

excellentRDS(ON)andlowgatecharge.Thecomplementary

MOSFETsmaybeusedtoformalevelshiftedhighside

switch,andforahostofotherapplications.

N-channelP-channel

GeneralFeatures

●N-ChannelSchematicdiagram

V=30V,I=6A

DSD

RDS(ON)25mΩ@VGS=10V

RDS(ON)44mΩ@VGS=4.5V

●P-Channel

V=-30V,I=-6A

DSD

RDS(ON)39mΩ@VGS=-10V

RDS(ON)51mΩ@VGS=-4.5V

●Highpowerandcurrenthandingcapability

●LeadfreeproductisacquiredMarkingandpinassignment

●Surfacemountpackage

SOP-8topview

PackageMarkingandOrderingInformation

DeviceMarkingDeviceDevicePackageReelSizeTapewidthQuantity

NCE4606BNCE4606BSOP-8Ø330mm12mm4000units

AbsoluteMaximumRatings(T=25℃unlessotherwisenoted)

A

ParameterSymbolN-ChannelP-ChannelUnit

Drain-SourceVoltageVDS30-30V

Gate-SourceVoltageVGS±20±20V

T=25℃