Danfoss丹佛斯Semikron Danfoss Application Note Dynamic Characterization of SiC Diodes EN Rev-00 应用指南.pdf

ApplicationNoteRevision:00

AN22-001Issuedate:2022-03-18

Preparedby:DanielPrindle

Approvedby:MartinRˆblitz,StefanH‰user

Keyword:diode,SiC,Schottky,SBD,reverserecovery,MOSFET

DynamicCharacterizationofSiCDiodes

1.Introduction1

1.1Siliconvssiliconcarbide1

1.2Semiconductordoping2

1.3pnjunctionsvs.Schottkybarrierjunctions2

1.4MOSFETbodydiode3

2.Turn-offBehaviourforDifferentDiodeTypes4

2.1MOSFETbodydiode4

2.2SiCMOSFETwithanti-parallelSchottkybarrierdiode5

2.3Schottkybarrierdiodeonly6

2.4ILC:parasiticoscillations7

3.SEMIKRONModuleDatasheets8

3.1SiCMOSFETonly8

3.2SiCMOSFETandSchottkybarrierdiode9

3.3IGBTandSchottkybarrierdiode(hybridmodule)10

3.4Schottkybarrierdiodeonly10

4.Conclusion10

1.Introduction

Thisapplicationnotedescribestheswitchingbehaviourofsiliconcarbide(SiC)Schottkybarrierdiodes(SBD)

andhowtheydifferfromMOSFETpnbodydiodes.

1.1Siliconvssiliconcarbide

Siliconandsiliconcarbideproductsaremadefromdifferentbasematerials.Siliconproductsaremadefrom

pureSiwafers,whereasSiCwaferscontainbothsiliconandcarbon.ThedifferencesinmaterialgiveSiCa

widerangeofbenefitsoverpuresilicon,suchasahigherswitchingspeedsandheatdissipation(Figure1).

Figure1:Impactofdifferentphysicalparametersofsemiconductormaterials[2]

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