士兰微一级代理商CRTK700N10S-G深圳阜 康科技.pdf

SiliconN-ChannelPowerMOSFET

CRTK700N10S-G

GeneralDescription：

CRTK700N10S-GthesiliconN-channelEnhancedVDSS100V

ID13A

VDMOSFETs,isobtainedbythehighdensityTrenchtechnology

PD22.7W

whichreducetheconductionloss,improveswitching

RDS(ON)57mΩ

performanceandenhancetheavalancheenergy.Thetransistor

canbeusedinvariouspowerswitchingcircuitforsystem

miniaturizationandhigherefficiency.Thepackageformis

PDFN3.3*3.3,whichaccordswiththeHalogenFreestandard.

Features：

FastSwitching

LowONResistance(Rdson≤70mΩ)

LowGateCharge

LowReversetransfercapacitances

100%SinglePulseavalancheenergyTest

HalogenFree

Applications：

Powerswitchcircuitofadaptorandcharger.

Absolute（Tj=25℃unlessotherwisespecified）：

SymbolParameterRatingUnits

VDSSDrain-to-SourceVoltage100V

ContinuousDrainCurrentTc=25°C13A

ID

ContinuousDrainCurrentTc=100°C8.4A

a1

IDMPulsedDrainCurrentTc=25°C52A

VGSGate-to-SourceVoltage