士兰微一级代理商CS8N05AEP-G深圳阜 康科技.pdf

SiliconN-ChannelTrenchMOSFETR

CS8N05AEP-G

GeneralDescriptionVDSS45V

ID8A

CS8N05AEP-G,thesiliconN-channelEnhancedVDMOSFETs,is

P(T=25℃)3.1W

DC

obtainedbyadvancedtrenchTechnologywhichreducethe

RDS(ON)Typ(VGS=10V)15mΩ

conductionloss,improveswitchingperformanceand

enhancetheavalancheenergy.Thetransistorcanbeusedinvarious

powerswitchingcircuitforsystemminiaturizationandhigher

efficiency.ThepackageformisSOP-8,whichaccordswiththe

RoHSstandard.

Features

lFastSwitching

lLowONResistance(Rdson≤25m)

lLowReversetransfercapacitances(Typical:71pF)

l100%SinglePulseavalancheenergyTest

lHalogenfree

Applications

Powerswitchcircuitofadaptorandcharger.

Absolute（TA=25unlessotherwisespecified）：

SymbolParameterRatingUnits

VDSSDrain-to-SourceVoltage45V

ContinuousDrainCurrent8A

ID

ContinuousDrainCurrentTA=100C4.8A

IDMa1PulsedDrainCurrent