YJ扬杰功率三极管 MJD45H11B规格说明书.pdf

人MJD45H11BReNs

PNPHighPowerBipolarTransistor

Features

eEpoxymeetsUL-94V-0flammabilityratingandhalogenfree

esMoistureSensitivityLevel1

Applications

esComplementtoMJD44H11B

六，人XeLowCollectorEmitterSaturationVoltage

1PIN3PIN3eFastSwitchingSpeeds

PIN1cPIN1

PIN2MechanicalData

ePackage:TO-252

seTerminals:Tinplatedleads,solderableperJ-STD-002

PIN1andJESD22-B102

eUnitWeight:0.32g

PIN1:Base

mPIN2:Collector

PIN3PIN3:Emitter

MaximumRatings(Ta=25Cunlessotherwisenoted)

ltemSymbolUnitValue

DevicemarkingcodeMJD45H11B

Collector-basevoltage8-100

Collector-emittervoltageVcEoV-80

Emitter-basevoltageVEBoV-6

Collectorcurrentle-8

Powerdissipation羽Po二1.5

Thermalresistance,junction-to-ambient和RuCAW83.3

Junctiontemperature了和-55to+150

StoragetemperatureTsreC-55to+150

(DevicemountedonFR-4PCB(25.4*25.4*1.0mm)jmountingpad，

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S-B3552YangzhouYangjieElectronicTechnologyCo.,Ltd.

Rev.1.0,12-Aug-24

了7/MJD45H11BReNs

@ElectricalCharacteristics(Ta=25Cunlessotherwisenoted)

ltemSymbolUnitConditionsMinTypMax

Collector-basebreakdownvoltageVeeRiceoVlc=-100uA,IE=0-100

Collector-emitterbreakdownvoltageVeeRicEoVlc=-1mA,le=0-80

Emitter-basebreakdownvoltageVaniEsoVIE=-100uA,lc=0-6

Collector-basecut-offcurrentlceo5Vce=-100V-1

CollectorcutoffcurrentIcesUAVcE=-64V-1

Emitter