YJ扬杰ALL MOSFET YJQ085P10B规格说明书.pdf

RoHS

人YJQ085P10Bcom

P-ChannelEnhancementModeFieldEffectTransistor

ProductSummary

om4eVDS-100V

oo人人e1D-16A

seRDS(ON)(atVGS=-10V)人器局

es。RDS(ON)(atVGS=-4.5V)102m0

e100%EASTested

GeneralDescription

BottomVieweExcellentpackageforheatdissipation

,5,2,5eHighdensitycelldesignforlowRDS(ON)

emMeetsUL94V-0FlammabilityRating

eHalogenFree

DFN3333-8L于icati

人Applications

工ePowerswitchingapplication

seUninterruptiblepowerSupply

1034eDC-DCconvertor

S人S0

LimitingValues

ParameterConditionsSymbolMinMaxUnit

Drain-sourceVoltageTuJ25CITJ150C-100

Gate-sourceVoltageTs150*CiDCVes-2020

TaA=25C,Vcs=-10V--3.3

ContinuousDrainCurrent(Note1.2)Steady-State

Ta=100*C,Ves=-10V--2

lp

Tec=25C,Vss=-10V,Chiplimitation-16

ContinuousDrainCurrent(Note1,3)Steady-State

Tc=100C,Ves=-10V--10

PulsedDrainCurrentTec=25fC,tp10hslow,-60

MaximumBod