双频容性耦合等离子体刻蚀工艺的物理基础.ppt

E(x,t)?xj,?vjIonpositionsxj(t)andvelocitiesvj(t)betweentwocontiguouscollisions.Pleasenotice:theiontrajectoryisabeelineundertheactionoftheelectricfield.离子在鞘层中受鞘层电场的运动离子在鞘层中与中性粒子的碰撞e0e1qr?弹性碰撞?电荷交换碰撞dimensionalmodelx=0LFWhenthechamberradiusRisfarlargerthanthedistancedbetweentwoelectrodes,wecanusethe1Dmodeltosimulatethedischarge,i.e.,Rd.x=dHFInfluenceofHF-powerfrequencyonplasmadensity1P=100mTorr,Vh=200V,Vl=400Vfl=2MHz,fh=20,30,60MHz,2P=50mTorr,Vh=50V,Vl=100V,fh=60MHz,fl=2,5,10,13.56MHz1InfluenceofLF-powerfrequencyonplasmadensity2P=100mTorr,Vh=200V,Vl=400Vfl=2MHz,fh=20,30,60MHz,InfluenceofHF-powerfrequencyonsheathvoltagedrop平均鞘层电位降：与解析模型的比较fh=30MHz,P=50mTorr,Vh=200V,Vl=400V1fl=2MHzP=100mTorr,Vh=200V,Vl=400V2离子入射到电极上的能量分布Two-dimensionalmodelHFpowerLFpowerH2RDSchematicdiagramofDF-CCPH=2.45cm2R=43.18cmD=6.35cmI.InfluenceofhighfrequencyfH?averagedelectrondensity:27MHz40MHz60MHzVHF=50V,VLF=100V,fL=2MHz,p=100mTorrTheelectrondensityincreasessignificantlyasincreasingvaluesoffL.?averagedelectrontemperature:27MHz40MHz60MHzVHF=50V,VLF=100V,fL=2MHz,p=100mTorrTheelectrondensityincreasesslightlyasincreasingvaluesoffL.II.influenceoflowfrequency12MHzWiththeincreaseoflowfrequency,twosourcesbecomefromdecouplingtocoupling,andtheelectrondensityincreasessignificantlywhentwosourcescoupling.2MHz6MHz?averagedelectrondensity:VHF=50V,VLF=100V,fH=60MHz,p=100mTorr?Averagedelectrontemperature:2MHzWiththeincreaseoflowfrequency,thetemperatureofelectronsincreasesslightly.6MHz12MHzVHF=50V,VLF=100V,fH=60MHz,p=100mTorrEzinaLFperiod:VHF=50V,VLF=100V,fLF=2MHz,fHF=60MHz,p=100mTorrErinaLFperiod:VHF=50V,VLF=100V,fLF=2MHz,fHF=60M