宏盛微半导体HYG022N04LS1C1.pdf

HYG022N04LS1C1Microelectronics

N-ChannelEnhancementModeMOSFET

FeaturePinDescription

40V/127A

RDS(ON)=2.2mΩ(typ.)@VGS=10V

RDS(ON)=3.5mΩ(typ.)@VGS=4.5V

100%AvalancheTested

100%DVDS

ReliableandRugged

Pin1

HalogenFreeandGreenDevicesAvailablePDFN8L(3.3x3.3)

(RoHSCompliant)

Applications

BatteryProtection

DC-DC

SingleN-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

C1C1:PDFN8L(3.3x3.3)

HYG022N04

XYMXXXXXXDateCode

XYMXXXXXX

Note:HUAYIhalogenfreeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIhalogenfreeproductsmeetorexceedthehalogenfree

require-mentsofIPC/JEDECJ-STD-020forMSLclassificationathalogenfreepeakreflowtemperature.HUAYI

defines“Green”tomeanhalogenfree(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmby

weightinhomogeneousmaterialandtotalofBrandCldoesnotexceed1500ppmbyweight).

HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothispr

-oductand/ortothisdocumentatanytimewithoutnotice.

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