宏盛微半导体HYG023N04NS1B.pdf

HYG023N04NS1B

SingleN-ChannelEnhancementModeMOSFET

FeaturePinDescription

40V/200A

RDS(ON)=1.9mΩ(typ.)@VGS=10V

100%AvalancheTested

ReliableandRugged

Halogen-FreeDevicesAvailable

TO-263-2L

(RoHSCompliant)

Applications

BatteryManagementSystem

Inverter

SingleN-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

BB:TO-263-2L

G023N04

DateCode

XYMXXXXXX

XYMXXXXXX

Note:HUAYIlead-freeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIlead-freeproductsmeetorexceedthelead-Freerequire-

mentsofIPC/JEDECJ-STD-020forMSLclassificationatlead-freepeakreflowtemperature.HUAYIdefines“Green”

tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightinhomogeneous

materialandtotalofBrandCldoesnotexceed1500ppmbyweight).

HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothispr

-oductand/ortothisdocumentatanytimewithoutnotice.

AbsoluteMaximumRatings

V1.0

1

HYG023N04NS1B

SymbolParameterRating