宏盛微半导体HYG038N03LR1D.pdf

HYG038N03LR1D

SingleN-ChannelEnhancementModeMOSFET

FeaturePinDescription

30V/78A

RDS(ON)3.5mΩ(typ.)@VGS10V

RDS(ON)4.9mΩ(typ.)@VGS4.5V

100%AvalancheTested

ReliableandRugged

Halogen-FreeDevicesAvailableDS

G

Applications

LoadSwitch

Lithiumbatteryprotectboard

SingleN-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

DD:TO-252-2L

G038N03

XYMXXXXXXDateCode

XYMXXXXXX

Note:HUAYIlead-freeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIlead-freeproductsmeetorexceedthelead-Freerequire-

mentsofIPC/JEDECJ-STD-020forMSLclassificationatlead-freepeakreflowtemperature.HUAYIdefines“Green”

tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightinhomogeneous

materialandtotalofBrandCldoesnotexceed1500ppmbyweight).

HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothispr

-oductand/ortothisdocumentatanytimewithoutnotice.

V1.1

1

HYG038N03LR1D

AbsoluteMaximumRatings

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