宏盛微半导体HYG038N03LR1C1.pdf

HYG038N03LR1C1

SingleN-ChannelEnhancementModeMOSFET

FeaturePinDescription

30V/57A

RDS(ON)3.1mΩ(typ.)@VGS10V

RDS(ON)4.6mΩ(typ.)@VGS4.5V

100%AvalancheTested

ReliableandRugged

Halogen-FreeDevicesAvailable

Applications

BatteryProtection

SingleN-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

C1C1:PDFN8L（3.3*3.3）

G038N03DateCode

XYMXXXXXX

XYMXXXXXX

Note:HUAYIlead-freeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIlead-freeproductsmeetorexceedthelead-Freerequire-

mentsofIPC/JEDECJ-STD-020forMSLclassificationatlead-freepeakreflowtemperature.HUAYIdefines“Green”

tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightinhomogeneous

materialandtotalofBrandCldoesnotexceed1500ppmbyweight).

HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothispr

-oductand/ortothisdocumentatanytimewithoutnotice.

V1.1

1

HYG038N03LR1C1

AbsoluteMaximumRatings

SymbolParameterRatingUnit

CommonRatings(Tc25℃UnlessOtherwiseNoted)

VDSSDrain-SourceVoltage30V